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New TSOP311../TSOP313..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP31#.. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package acts as an IR filter. The demodulated output signal can be directly decoded by a microprocessor. The TSOP311.. is compatible with all common IR ... remote control data formats. The TSOP313.. is optimized to better suppress spurious pulses from energy saving fluorescent lamps but will also suppress some data signals. This component has not been qualified according to automotive specifications.
1 2 3
94 8691
Mechanical Data
Pinning: 1 = GND, 2 = VS, 3 = OUT
Features
* Very low supply current * Photo detector and preamplifier in one package e3 * Internal filter for PCM frequency * Improved shielding against EMI * Supply voltage: 2.5 V to 5.5 V * Improved immunity against ambient light * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Insensitive to supply voltage ripple and noise
Product Matrix
Standard applications TSOP311.. Very noisy enviroments TSOP313..
Parts Table
Part TSOP31#30 TSOP31#33 TSOP31#36 TSOP31#38 TSOP31#40 TSOP31#56 Carrier Frequency 30 kHz 33 kHz 36 kHz 38 kHz 40 kHz 56 kHz
Block Diagram
16831
Application Circuit
19267
2 25 k Input PIN AGC Band Pass Demodulator
VS
3
OUT
IR Transmitter with TSALxxxx
TSOP....
VS
OUT
Circuit
C
VO GND
1 Control Circuit
GND
No external components are required
Document Number 81763 Rev. 1.0, 09-Aug-07
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New TSOP311../TSOP313..
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Parameter Supply voltage Supply current Output voltage Output current Junction temperature Storage temperature range Operating temperature range Power consumption Soldering temperature (Tamb 85 C) t 10 s, 1 mm from case (Pin 2) (Pin 2) (Pin 3) (Pin 3) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to (VS + 0.3) 5 100 - 25 to + 85 - 25 to + 85 10 260 Unit V mA V mA C C C mW C
Electrical and Optical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter Supply current (Pin 2) Supply voltage Transmission distance Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Angle of half transmission distance Test condition Ev = 0, VS = 3.3 V Ev = 40 klx, sunlight Symbol ISD ISH VS d 2.5 45 Min 0.27 Typ. 0.35 0.45 5.5 Max 0.45 Unit mA mA V m
Output voltage low (Pin 3)
VOSL
100
mV
Minimum irradiance
Ee min Ee max 1/2
0.15
0.35
mW/m2 W/m2
Maximum irradiance Directivity
30 45
deg
Typical Characteristics
Tamb = 25 C, unless otherwise specified
Ee Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, N = 6 pulses, f = f0, T = 10 ms)
0.4
tpo - Output Pulse Width (ms)
0.35 0.3 0.25 0.2 0.15 Input Burst Length 0.1 0.05 0 = 950 nm, optical test signal, fig. 1 0.1 1 10 100 1000 10000 100000 Output Pulse Width
tpi *) T 6/fo is recommended for optimal function
t
*) tpi
Output Signal VO VOH VOL td1 )
1) 2)
14337
3/f0 < td < 9/f0 tpi - 4/f 0 < tpo < tpi + 6/f0 t
tpo2 )
20771
Ee - Irradiance (mW/m)
Figure 1. Output Active Low
Figure 2. Pulse Length and Sensitivity in Dark Ambient
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Document Number 81763 Rev. 1.0, 09-Aug-07
New TSOP311../TSOP313..
Vishay Semiconductors
600 s T = 60 ms Output Signal, (see fig. 4)
600 s
t
Eemin - Threshold Irradiance (mW/m)
Ee
Optical Test Signal
4 Correlation with ambient light sources: 3.5 10 W/m = 1.4 kLx (Std. illum. A, T = 2855 K) 10 W/m = 8.2 kLx (Daylight, T = 5900 K) 3 2.5 2 1.5 1 0.5 0 0.01 Wavelength of ambient illumination: = 950 nm
94 8134
VO VOH VOL
Ton
Toff
t
20757
0.1
1
10
100
Ee - Ambient DC Irradiance (W/m)
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Ee min - Threshold Irradiance (mW/m)
0.8
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000
Ton, Toff - Output Pulse Width (ms)
0.7 0.6 0.5
Ton
f = 100 Hz f = 10 kHz f = 20 kHz
Toff 0.4 0.3 0.2 0.1 0 0.1 = 950 nm, optical test signal, fig. 3 1 10 100 1000 10000
f = 30 kHz f = fo
20759
Ee - Irradiance (mW/m)
20753
VsRMS - AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.7
16925
500
E e min /E e - Rel. Responsivity
E - Max. Field Strength (V/m)
450 400 350 300 250 200 150 100 50 0 0 500 1000 1500 2000 2500 3000
f = f0 5 % f (3 dB) = f0 /10
0.9
1.1
1.3
20747
f/f0 - Relative Frequency
f - EMI Frequency (MHz)
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 81763 Rev. 1.0, 09-Aug-07
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New TSOP311../TSOP313..
Vishay Semiconductors
1 0.9
0
10
20
30
Max. Envelope Duty Cycle
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 f = 38 kHz, Ee = 2 mW/m 20 40 60 80 100 120
19258
40 1.0
TSOP311..
0.9 0.8
50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance
TSOP313..
0.7
20814
Burst Length (number of cycles/burst)
Figure 9. Max. Envelope Duty Cycle vs. Burst Length
Figure 12. Horizontal Directivity
Ee min - Threshold Irradiance (mW/m)
0.3 0.25 0.2
0
10
20 30
40 1.0 50 60 70 80
- 10 10 30 50 70 90
19259
0.15 0.1 0.05 0 - 30
0.9 0.8 0.7
20755
Tamb - Ambient Temperature (C)
0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity
1.2
0.2 0.18
S ( ) rel - Relative Spectral Sensitivity
1.0 0.8 0.6 0.4 0.2 0.0 750 850 950 1050 1150
Ee min - Sensitivity (mW/m)
0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 2 2.5 3 3.5 4 4.5 5 5.5 6
16919
- Wavelength (nm)
20756
Vs - Supply Voltage (V)
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 14. Sensitivity vs. Supply Voltage
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Document Number 81763 Rev. 1.0, 09-Aug-07
New TSOP311../TSOP313..
Vishay Semiconductors Suitable Data Format
The TSOP31#.. series is designed to suppress spurious output pulses due to noise or disturbance signals. Data and disturbance signals can be distinguished by the devices according to carrier frequency, burst length and envelope duty cycle. The data signal should be close to the band-pass center frequency (e.g. 38 kHz) and fulfill the conditions in the table below. When a data signal is applied to the TSOP31#.. in the presence of a disturbance signal, the sensitivity of the receiver is reduced to insure that no spurious pulses are present at the output. Some examples of disturbance signals which are suppressed are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signals at any frequency * Modulated noise from fluorescent lamps with electronic ballasts
IR Signal
IR Signal from fluorescent lamp with low modulation
0
16920
5
10
15
20
Time (ms)
Figure 15. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent lamp with high modulation
IR Signal
0
16921
10
10
15
20
Time (ms)
Figure 16. IR Signal from Fluorescent Lamp with high Modulation
TSOP311.. Minimum burst length After each burst of length A gap time is required of For bursts greater than A gap time in the data stream is needed of Maximum continuous short bursts/second Compatible to NEC code Compatible to RC5/RC6 code Compatible to Sony code Compatible to RCMM code Compatible to r-step code Compatible to XMP code Suppression of interference from fluorescent lamps 6 cycles/burst 6 to 70 cycles 10 cycles 70 cycles > 1.2 x burst length 2000 yes yes yes yes yes yes Common disturbance signals are supressed (Example: Signal pattern of fig. 15)
TSOP313.. 6 cycles/burst 6 to 35 cycles 10 cycles 35 cycles > 6 x burst length 2000 yes yes no yes yes yes Even critical disturbance signals are suppressed (Examples: Signal pattern of fig. 15 and fig. 16)
For data formats with long bursts (more than 10 carrier cycles) please see the data sheet for TSOP312../TSOP314..
Document Number 81763 Rev. 1.0, 09-Aug-07
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New TSOP311../TSOP313..
Vishay Semiconductors Package Dimensions in millimeters
96 12116
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Document Number 81763 Rev. 1.0, 09-Aug-07
New TSOP311../TSOP313..
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81763 Rev. 1.0, 09-Aug-07
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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